Abstract
We investigated a growth technique for ultra-low-density self-assembled InAs QDs using Bi surfactant-assisted interdiffusion epitaxy (IDE). The samples were grown using a solid-source molecular beam epitaxy system. InP(311)B substrates were used to grow InAs QDs. After growing the InP buffer layer, a 100 nm-thick InGaAlAs barrier layer and a 1 nm-thick InP were used for the IDE process, and self-assembled InAs QD were formed. The density of QDs was very low, approximately 3.2×107/cm2, which is three orders of magnitude smaller than that of the conventional QD. Moreover, sharp photoluminescence was observed from a single QD at 1522 nm.
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