Abstract
In this paper, we present an InAs/GaSb type-II superlattice (SL) with the M-structure for the fabrication of a long-wavelength (10μm range) infrared (LWIR) focal plane arrays (FPA), which are grown by molecular beam epitaxy (MBE). The M-structure is named for the shape of the band alignment while the AlSb layer is inserted into the GaSb layer of InAs/GaSb SL. A 320×256 LWIR FPA has been fabricated with low surface leakage and high R0A product of FPA pixels by using anodic sulfide and SiO2 physical passivation. Experiment results show that the devices passivated with anodic sulfide obviously have higher R0A than the un-sulphurized one. The 50% cutoff wavelength of the LWIR FPA is 9.1μm, and the R0A is 224Ωcm2 with the average detectivity of 2.3×1010cmHz1/2W−1.
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