Abstract

We have developed an approach for relatively rapid and easy fabrication of large-area two-dimensional (2-D) photonic crystal structures with controlled defects in the lattice. The technique is based on the combination of two lithographic steps in UV-sensitive SU-8 photoresist. First, multiple exposures of interference fringes are used in combination with precise rotation of the sample to define a 2-D lattice of holes. Second, a strongly focused UV laser beam is used to define line-defect waveguides by localized exposure in the recorded but not yet developed lattice from the first step. After development, the mask is transferred into a GaAs substrate with dry etching in chemically assisted ion-beam etching.

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