Abstract
Fabrication processes have been developed to form the tunnel barriers in the suspended multi-wall carbon nanotubes (MWCNTs). Individual MWCNTs are positioned under the optical microscope to bridge them between the two metal electrodes. The tunnel barrier is formed by irradiating them with focused Ga ion beam (FIB), and its characteristics are evaluated with the resistance increase by the irradiation and the barrier height. It is found that those values depend not only on the dose of the Ga ions, but also on a diameter of the MWCNT. The single electron transistors (SETs) are fabricated by forming the double barriers in the suspended MWCNT. We find some devices show regular and stable SET behaviours.
Highlights
Carbon nanotubes are an attractive building block of the nanodevices because of their extremely small diameter that are realized in a self-assemble manner.[1]
The two-terminal resistance of most of the measured multi-wall carbon nanotubes (MWCNTs) was found to be in a range of 10 kΩ to 20 kΩ at RT for all the suspended samples before the focused Ga ion beam (FIB) irradiation
The individual and suspended MWCNTs have been fabricated with a mechanical transfer technique, and the tunnel barriers were scitation.org/journal/adv formed on them by the local FIB irradiation
Summary
Carbon nanotubes are an attractive building block of the nanodevices because of their extremely small diameter that are realized in a self-assemble manner.[1]. The Ohmic nature of the contact makes it possible to fabricate more functional multi-dot devices once the reliable and flexible tunnel barrier fabrication process is developed.[19]. We reported the use of Ar ion beam irradiation through an opening of the electron beam resist to form the tunnel barriers,[21,22] and have recently shown that the focused ion beam (FIB) irradiation process is more reproducible and flexible.[23]. In both cases, the MWCNTs were dispersed on a substrate from solution.
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