Fabrication of tridoped p-ZnO thin film and homojunction by RF magnetron sputtering

Abstract

Tridoping (Al–As–N) into ZnO has been proposed to realize low resistive and stable p-ZnO thin film for the fabrication of ZnO homojunction by RF magnetron sputtering. The tridoped films have been grown by sputtering the AlN mixed ZnO ceramic targets (0, 0.5, 1 and 2mol%) on GaAs substrate at 450°C. Here, Al and N from the target, and As from the GaAs substrate (back diffusion) takes part into tridoping. The grown films have been characterized by Hall measurement, X-ray diffraction, photoluminescence, time-of-flight secondary ion mass spectroscopy and X-ray photoelectron spectroscopy. It has been found that all the films showed p-conductivity except for 2mol% AlN doped film. The obtained resistivity (8.6×10−2Ωcm) and hole concentration (4.7×1020cm−3) for the best tridoped film (1mol% AlN) is much better than that of monodoped and codoped ZnO films. It has been predicted that [(AsZn−2VZn)+NO] acceptor complex is responsible for the p-conduction. The homojunction fabricated using the best tridoped ZnO film showed typical rectifying characteristics of a diode. The junction parameters have been determined for the fabricated homojunction by Norde's and Cheung's method.