Abstract
Bi-layer coatings from sputtered indium tin oxide (ITO) and gallium doped zinc oxide (Ga:ZnO) were investigated for transparency in the visible range of the electromagnetic spectrum, optical rejection ability in the near infrared spectrum and conductivity for the novel quantum dot-based solar cells. The multilayer stack produced at optimal oxygen partial pressure exhibits improved optical properties without worsening the electrical ones, even after additional oxidation during the reactive sputtering of the metal-oxides. With a mean optical transmittance of 91.3% in the visible region, mean optical rejection greater than 65% in the infrared range and resistivity lower than 0.4 × 10−2 Ω.cm, this coating is good candidate for front panel electrode in the CdS/ZnS core-shell quantum dot-based solar cells.
Highlights
Transparent conductive films are important part of any optoelectronic device
In the solar cell fabrication, the efficiency of the cell is strongly dependent on the quality of the transparent conductive electrode (TCE) [1]
Thin films of ZnO doped by gallium doped zinc oxide (Ga) (GZO), and indium-tin oxide (ITO)/GZO were prepared by RF sputtering of 3 inches-diameter targets on glass substrates
Summary
In the solar cell fabrication, the efficiency of the cell is strongly dependent on the quality of the transparent conductive electrode (TCE) [1]. It is preferable if the TCE can transmit more than 82-85% of the visible light with broad band of the transmission characteristic and if it can reject the infrared (IR) and ultraviolet (UV) components. The absolute resistivity of the ZnO still has been too high as compared to the ITO Metal dopants, such as Al, In or Ga, have been used to improve the electrical conductivity of the films.
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