Abstract
Transparent p–n junctions composed of zinc oxide and magnesium-doped copper–chromium oxide thin films were prepared using radio-frequency (RF) magnetron sputtering deposition on indium–tin oxide glass substrates. The temperature of the substrate during deposition was varied to examine differences in the diode characteristics of the current–voltage response effect. The crystalline structure of the diode films was verified using X-ray diffraction (XRD) analysis. The ratio of the forward current to the reverse current reached 85.9 in the range of +4 to -4 V at a deposition temperature of 450 °C. The p–n junction diode film had an optical transparency above 75% for wavelengths in the visible range.
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