Abstract
The ion-implantation method can fabricate TiO2 thin films of anatase and rutile structures in an alternate sequence together so that a wide range of applications can be realized. By changing the implantation parameters, the thickness of anatase and rutile thin films can be modulated, and films with a thickness of nano-scale can be achieved. An amorphous TiO2 thin film with a thickness of 13nm was formed in a rutile TiO2 single crystal by low energy He+ ions with high fluences, and this amorphous phase transformed to an anatase and even a rutile phase with thermal treatments. SEM and AFM were used to observe the surface morphology of TiO2 thin film. TEM and Raman scattering techniques confirmed the phase transition process in TiO2 thin films with temperature increase. The design of a combination of TiO2 thin films with both anatase and rutile phases together using the ion-implantation method is also explained.
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