Abstract
Effect of thermal treatments on the structural and electrical properties of the chemical bath deposition derived Ti-doped ZnO thin films are studied. XRD results show that the annealed Ti-doped ZnO films with wurtzite structure are randomly oriented. Crystallite structure, carrier concentration, resistivity and mobility are found to be dependent on the treatment temperature. At a treatment temperature of 100°C, the Ti-doped ZnO film possesses a carrier concentration of 2.5×1020 cm-3, a resistivity of 2.8×10-3 Ω-cm, and a mobility of 12 cm2/Vs.
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