Abstract
We report on the fabrication of a three-terminal device consisting of source, drain, and gate electrodes in Bi2Sr2CuCu2O8+δ (Bi-2212) by a three-dimensional (3D) focused-ion-beam (FIB) etching method. The gate electrode is capacitively coupled to the central island between two submicron tunnel junctions with S=0.25μm2 in series via a stacked Josephson junction. Two stacks, including an island structure, show current peaks on current–voltage characteristic (IVC) by a gate voltage (Vg) through a stacked Josephson junction (SJJ).
Published Version
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