Abstract
Thin-film transistor based on controllable electrostatic self-assembled monolayer single-wall carbon nanotubes (SWNTs) network has been fabricated by varying the density of nanotubes on the silicon substrate. The densities of SWNTs network have been investigated as a function of concentration and assembly time. It has been observed that the density of SWNTs network increases from 0.6µm−2 to 2.1µm−2, as the average on-state current (Ion) increases from 0.5mA to 1.47mA. The device has a current on/off ratio (Ion/Ioff) of 1.3×104 when Ion reaches to 1.34mA.
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