Abstract
A novel method for the fabrication of cleaved-cavities has been developed that uses a copper plate assembly to support semiconductor layers after substrate removal. PbSe layers were grown through a combination of molecular beam epitaxy and liquid phase epitaxy on Si [100] substrates using CaF/sub 2/ and BaF/sub 2/ buffer layers. After growth the sample was bonded to the edges of a copper plate assembly epilayer down and the BaF/sub 2/ buffer layer was etched away allowing for growth substrate removal. This technique allows fabrication of cleaved Fabry-Perot resonant cavities by separating the copper plates after the substrate is removed.
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