Fabrication of Thick-film Silicon-on-Insulator by Separation by Implanted Oxygen Layer Transfer

Abstract

In this paper, two approaches combined the Separation by IMplanted OXygen (SIMOX) layer transfer (SLT) process with Si epitaxy are proposed to fabricate thick-film Silicon-on-Insulator (SOI). Spectroscopic ellipsometry indicates thick-film SOI wafers with the top Si layers of 1430.86 {plus minus} 19.8 nm and 1476.44 {plus minus} 18.5 nm are achieved. Atomic-scale sharp interfaces between the top Si layer and buried oxide layers are observed by high-resolution transmission electron microscopy. Using atomic force microscopy, surface morphology of the SOI wafer is also investigated.