Abstract
AbstractThick AlN crystals were grown by conventional hydride vapor phase epitaxy (HVPE) on AlN/sapphire templates under low pressure (∼15 Torr) at high temperature (1100 °C–1200 °C). Colorless, mirror‐like AlN films were obtained at the growth rates of up to 20.6 μm/h. The best root mean square (RMS) value of atomic force microscope (AFM) observations for the AlN surface was 0.19 nm in a surface of 5×5 μm2. The typical values of full width half maximum (FWHM) of X‐ray rocking curves for (0002) and (10$ \bar 1 $2) diffraction of AlN films were 173–314 arcsec and 1574–1905 arcsec, respectively. We also investigated the influences of carrier gas, growth temperature and growth rate on the crystal quality. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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