Abstract
A GaAs/GaAlAs-system TE/TM mode splitter using the mode interference principle is described. Single- and double-mode waveguides are patterned by reactive ion etching after the first molecular beam epitaxy. They are then completely buried by liquid-phase epitaxy, which enables low loss propagation due to side-wall smoothness, because of the thermal deformation effect. For achieving low loss characteristics in this mode splitter, the surface treatment process before crystal growth and S-bend waveguide mask formation procedure are also optimized. Propagation loss of the single-mode waveguide is less than 1.0 dB/cm. In order to secure birefringence of the waveguide for mode splitting, upper and lower GaAlAs-cladding mol fractions are different. Finally, the fabricated device achieves the TE/TM mode splitting ratio of 8.2 dB for both polarizations.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
