Abstract
Surfaces with controllable micro structures are significant in fundamental development of superhydrophobicity. However, preparation of superhydrophobic surfaces with array structures on metal substrates is not effective using existing methods. A new method was presented to fabricate super-hydrophobic post arrays on aluminum (Al) substrates using mask electrochemical machining and fluoridation. Electrochemical etching was first applied on Al plates with pre-prepared photoresist arrays to make the post array structures. Surface modification was subsequently applied to reduce the surface energy, followed by interaction with water to realize superhydrophobicity. Simulation and experimental verification were conducted to investigate how machining parameters affect the array structures. Analysis of the water contact angle was implemented to explore the relationship between wettability and micro structures. The results indicate that superhydrophobic surfaces with controllable post structures can be fabricated through this proposed method, producing surfaces with high water static contact angles.
Highlights
1 Introduction Superhydrophobic surfaces have become a research focus owing to their various applications in self-cleaning [1, 2], corrosion resistance [3, 4] and anti-icing [5]
In order to obtain micro post arrays with the required structures, a 2D model as shown in Figure 2(a) was built in the ANSYS platform to study the variation of the array structures on process time (t) and current density (I)
3.3 Analysis of Wettability of the Post Arrays According to the observation of solid-liquid contact interfaces on as-prepared Al plates, two typical modes shown in Figure 8(a) were observed
Summary
Superhydrophobic surfaces have become a research focus owing to their various applications in self-cleaning [1, 2], corrosion resistance [3, 4] and anti-icing [5]. In order to obtain micro post arrays with the required structures, a 2D model as shown in Figure 2(a) was built in the ANSYS platform to study the variation of the array structures on process time (t) and current density (I).
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