Abstract
We demonstrate the fabrication of individual nanopores in hexagonal boron nitride (h-BN) with atomically precise control of the pore shape and size. Previous methods of pore production in other 2D materials typically create pores with irregular geometry and imprecise diameters. In contrast, other studies have shown that with careful control of electron irradiation, defects in h-BN grow with pristine zig-zag edges at quantized triangular sizes, but they have failed to demonstrate production and control of isolated defects. In this work, we combine these techniques to yield a method in which we can create individual size-quantized triangular nanopores through an h-BN sheet. The pores are created using the electron beam of a conventional transmission electron microscope; which can strip away multiple layers of h-BN exposing single-layer regions, introduce single vacancies, and preferentially grow vacancies only in the single-layer region. We further demonstrate how the geometry of these pores can be altered beyond triangular by changing beam conditions. Precisely size- and geometry-tuned nanopores could find application in molecular sensing, DNA sequencing, water desalination, and molecular separation.
Highlights
We demonstrate the fabrication of individual nanopores in hexagonal boron nitride (h-BN) with atomically precise control of the pore shape and size
We describe and establish a procedure for the fabrication of individual nanopores in few-layer h-BN with atomically precise control of pore size from few-atom vacancies to several nanometer side-length through careful control of transmission electron microscope (TEM) electron beam conditions
By using a beam condensed to a diameter of 10–20 nm at a current density of 37 A/cm[2], vacancies are readily formed in each layer sequentially and steadily grow with dose (Fig. 2(g) and (h)), effectively stripping away layer by layer. This process proceeds fairly slowly giving a good deal of control; Fig. 2(h) shows the area of the sample exposed for a given layer or below
Summary
Due to the preferential ejection of boron, attributed either to electron knock-on effects or selective chemical etching by atomic species present in the TEM, metastable nitrogen terminated zig-zag edges form and preserve a triangular shape under the electron beam. We develop a method that combines the strengths of these approaches by allowing for both the nucleation of single nanopores and for the precise growth of these defects in h-BN from few atom vacancies to several nanometer side-lengths This process can be accomplished in a conventional TEM by only modifying the beam conditions and does not need an advanced aberration-corrected TEM.
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