Abstract
It is necessary for practical and high performance MEMS to be fabricated microstructures with sub-micron widths and gaps (lines and spaces). In sub-micron deep X-ray lithography, one of the most crucial considerations is the fabrication of an X-ray mask with thick X-ray absorbers having sub-micron width. An X-ray mask, which was composed of 1μm thick Au with a 0.6μm line width and a 0.2μm space as absorbers, 2μm thick SiC with 240MPa of tensile stress as a membrane and 625μm thick Si as a frame, was fabricated. In order to reduce the influence of Fresnel diffraction, a PMMA resist was polymerized without residual stress, which had been the main cause of a warp in the substrate, by controlling of the polymerization process. As a result, a sub-micron PMMA structure with a maximum aspect ratio of 85, corresponding to 0.2μm minimum width, 6μm length and 17μm height, was fabricated by deep X-ray lithography.
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