Abstract
AbstractA relatively simple technique for the fabrication of sub 30 rim thick sheets of perfect single crystalline silicon is described. The thinnest sheets formed were 15 nim thick. The width of the sheets is 300–1000 nmn and the length of the sheets can be tens of microns. The sheets are crystallographically well defined with the thin dimension being bound by atomically smooth {111} planes. The sheets are fabricated using a combination of reactive ion etching and wet KOH etching steps.
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