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Abstract
Strain-balanced Si/SiGe multiple quantum wells (MQWs), which are designed to overcome the limitation of the number of wells coming from the strain accumulation, were fabricated, and their optical properties were investigated. X-ray diffraction spectra and cross-sectional transmission-electron-microscope images showed a high-crystalline quality of samples and excellent uniformity of the well width. Well-resolved no-phonon and TO-phonon-assisted transitions from strain-balanced MQWs were observed by low-temperature photoluminescence spectroscopy, and both their temperature and excitation power dependence showed blueshifts due to the delocalization of excitons, the band bending, and/or the band-filling effect.
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