Fabrication of stable low voltage organic bistable memory device

Abstract

Organic bistable memory device was fabricated by spin coating of polymethyl methacrylate (PMMA):ZnO nanoparticles onto ITO coated glass. The thin films were characterized by Raman, SEM, AFM and FTIR spectroscopies. The electrical characterization showed that the two-terminal device exhibited excellent switching characteristics with ON/OFF ratio greater than 2 × 10 3 when the voltage was swept between −2 V and +2 V. The device maintained its state even after removal of the bias voltage. Device did not show degradation after 1-h retention test at 120 °C. The memory functionality was consistent even after multiple cycles of operation and the device is reproducible. The switching mechanism is discussed on the basis of carrier transport mechanism. This demonstration provides a class of memory devices with the potential for extremely low-cost, low-power consumption applications, such as digital memory cell.