Abstract
SrAl2O4:Eu2+ films were fabricated on the Si substrates by metal–organic solution deposition method and subsequent treatment up to 1100 °C. The phase and microstructure of the obtained films were characterized by DTA-TG, XRD, SEM and AFM. The composition of the film was confirmed by XPS. The luminescence properties of the films were measured by spectrophotometer. The effect of annealing temperature on the structure and luminescence was studied. It showed that the films had the pure monoclinic phase and the depth about 2 µm. Under the excitation of 254 nm, SrAl2O4:Eu2+ films exhibited an intense green emission band peaking at 528 nm, which originates from the 4f–5d transition of the Eu2+ ions. The quenching temperature of the emission is about 400 K. The results indicated that the SrAl2O4:Eu2+ films have good potential for use as a green phosphor for displays and/or white light emitting diodes.
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