Abstract
The possibility of fabricating sputtering sources by plasma spraying is investigated for the deposition of nitride films by reactive sputtering of tantalum-hafnium mixtures. Plasma sprayed and hot pressed sources were found to produce films with identical properties even though the plasma spraying process introduces more nonmetallic impurities into the source. Improvements in controlled atmosphere chambers for plasma spraying would enable this method to compete favorably with hot pressing in terms of cost, versatility in making various shapes and sizes, and elimination of bonding problems in the rf sputtering of dielectrics.
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