Abstract
Sn@Al2O3 core-shell nanoparticles (NPs) with narrow spatial distributions were synthesized in silicon dioxide (SiO2). These Sn@Al2O3 core-shell NPs were self-assembled by thermally annealing a stacked structure of SiOx/Al/Sn/Al/SiOx sandwiched between two SiO2 layers at low temperatures. The resultant structure provided a well-defined Sn NP floating gate with a SiO2/Al2O3 dielectric stacked tunneling barrier. Capacitance-voltage (C-V) measurements on a metal-oxide-semiconductor (MOS) capacitor with a Sn@Al2O3 core-shell NP floating gate confirmed an ultra-high charge storage stability, and the multiple trapping of electron at the NPs, as expected from low-k/high-k dielectric stacked tunneling layers and metallic NPs, respectively.
Highlights
In recent years, the demand for smaller nonvolatile memory (NVM) devices with higher operating speeds, larger storage capacities, and higher data storage stabilities has significantly increased
Core-shell NPs are conventionally synthesized by coating the particle with a potential passing it through a drying canister filled with anhydrous CaSO4
We synthesized core-shell NPs by annealing a stacked structure consisting of two materials corresponding to the core and the shell, with the present Sn@Al2 O3 core-shell NPs being synthesized using a stack of Sn and Al layers as the core and the shell materials, respectively
Summary
The demand for smaller nonvolatile memory (NVM) devices with higher operating speeds, larger storage capacities, and higher data storage stabilities has significantly increased. We report the self-assembly of Sn@Al2 O3 core-shell NPs between tunneling, and control SiO2 layers by the thermal annealing of a stack of SiOx /Al/Sn/Al/SiOx sandwiched between two SiO2 layers at low temperatures below 550 ◦ C. This method should allow a facile resolution of the three key points mentioned above to improve the performances of NVM devices. 2 O3 core-shell NPs were formed in SiO2 by the thermal annealing of a stacked structure of electron microscopy (TEM). The programming and erasing operations were carried out using a Keithley 230 programmable voltage source (Keithley, Ohio, USA)
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