Abstract
In this paper, we investigated the electrical and memory properties of nonvolatile memory (NVM) using low temperature multi-stack gate insulators of SiO2/SiOx/SiOxNy (OOxOn) and an active layer using amorphous InGaZnO (a-IGZO) films. The various amorphous SiOx materials were studied by controlling the gas flow ratio of SiH4:N2O from 2:1 to 1:2 to determine the optimal conditions for the charge-trapping layer. The NVM devices using the OOxOn structure were investigated with SiOxNy tunneling thicknesses changing between 2.2, 2.5, and 2.8 nm. The characteristics of the NVM device with 2.8 nm SiOxNy tunneling thickness showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 93% after 10 years with low +13 V at an only programming duration of 1 ms. In addition, the optical transmittance of the a-IGZO films was measured the be over 85%. It is a promising candidate for achieving flexible displays and transparency on plastic substrates because of the possibility of the low-temperature deposition and high transparent properties of a-IGZO films. Therefore, the bottom-gate OOxOn NVM using high transparent a-IGZO active layer has become a potential device for flexible memory displays system.
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