Abstract
In this article, we demonstrate a technique for fabricating SiO2/two-dimensional (2D)-Si/SiO2 double barrier diodes and discuss their characteristics. Vertical 2D-Si with {111} side planes is formed by orientation-dependent etching of {110} Si using aqueous alkaline solution. The linewidth of the 2D-Si is reduced to nanometer order with NH4F/H2O2 solution. This solution also removes the residue generated on Si planes etched by aqueous alkaline solution. Using a skillful arrangement of dummy patterns and an etchback technique, poly-Si electrodes are successfully formed without any lithographic alignments. A SiO2/2D-Si/SiO2 diode fabricated by this process shows resonant characteristics that are in agreement with the calculated values.
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