Abstract
Nanofabrication of electron devices based on the stability of hydrogen- and oxygen-terminated diamond surfaces is performed using an atomic force microscope modification technology. A nanotechnology involving the separation of C–H and C–O bonded surfaces has been applied to realize the single-hole transistors. The single-hole transistors operate at liquid-nitrogen temperature (77 K), where the Coulomb oscillation characteristics are clearly observed.
Published Version
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