Fabrication of single-electron transistors based on proximity effects of el&tron-bearn lithography

Abstract

A simple method, based on the proximity effects of electron-beam lithography, which caused by overlapping the dosage distribution of the discretely electron beam written nano-dots, was employed to fabricate nano-structure containing narrow constrictions. A Si-based nano-dot with two narrow tunnel junctions called single electron transistor was formed after dry etching and thermal oxidation process since the overlapping region is much narrower than the diameter of the nano-dot. The electric characteristic of the SET was found to be consistent with the expected behavior of electron transport through a gated quantum dot.