Abstract
Poly(methylmethacrylate) has been found to act as a high resolution negative electron beam resist with sufficient dry-etch durability if acetone is used as a developer. We fabricated 10 nm silicon structures using the poly(methylmethacrylate) single-layer process and low temperature electron cyclotron resonance-type microwave-plasma etching without any additional complex processes.
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Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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