Abstract
Poly(methylmethacrylate) has been found to act as a high resolution negative electron beam resist with sufficient dry-etch durability if acetone is used as a developer. We fabricated 10 nm silicon structures using the poly(methylmethacrylate) single-layer process and low temperature electron cyclotron resonance-type microwave-plasma etching without any additional complex processes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have