Abstract
Single-crystalline Si1-xSnx thick layers on large area Si substrates are fabricated by applying Al-Sn paste using conventional screen-printing process and high temperature treatment step. The impact of the Al and Sn ratio in the Al-Sn pastes are investigated. From the XRD patterns, the crystalline Si1-xSnx peak has been detected and the Sn content in the Si1-xSnx films is increased with increasing annealing temperature reaching approximately 0.35% at 900°C.
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