Abstract
ABSTRACTA simple method, floating zone melting vapor, was used for fabricating nanowires of Si-Ge material. Single-crystalline nanowires were successfully synthesized. TEM images of these nanowires indicated that each nanowire consists of an inner single-crystalline core and an outer layer. An observation using high-resolution transmission electron microscopy (HRTEM) showed that almost all nanowires have a similar growth orientation to the crystalline core: [210]. The coexistence of germanium-self-catalyzed and oxide-assisted mechanisms has also been suggested.
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