Abstract
Self-aligned processing of high efficiency power heterojunction bipolar transistors (HBTs) using implant isolation, selective wet and dry etching for mesa formation, plasma-enhanced chemical vapor deposited SiNx for sidewall spacers and through-wafer via connections is reported. GaAs/AlGaAs and GaAs/InGaP HBTs grown by metalorganic molecular beam epitaxy utilizing carbon for high, well-confined base doping produced power-added efficiencies of 63%, power gain of 10 dB and output power of 1.7 W at 4 GHz for twelve 2×15 μm2 double-emitter finger devices (GaAs/AlGaAs) and 57% power-added efficiency, power gain of 11.3 dB and output power of 0.6 W at 4 GHz (GaAs/InGaP), respectively.
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