Abstract
Arrays of uniform gated Si field emitters with small gate-tip spacing and sharp tips were fabricated using a newly developed self-aligned process. Emitter tips with 80 nm gate-tip spacing were fabricated and low temperature plasma oxidation was used to sharpen the emitter tips. The enhancement factor of the field emitters increased by a factor of 2.6 after the emitter tips radius was reduced from 67 to 8 nm by plasma oxidation. Effects of surface passivation on the emission current of gated Si field emitters were investigated by exposing emitter tips to Cl2 and H2 plasmas prior to testing. Considerable improvements in the emission characteristics were observed after plasma passivation. The emission current was enhanced and the turn-on voltage was reduced after Cl2 and H2 plasma passivation, which corresponds to a work function reduction of 0.5 and 0.9 eV, respectively.
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