Abstract
In this work, antimony sulfide (Sb2S3) thin films were prepared by low-temperature plasma (about 190 °C) sulfidation of antimony metal layers, and the sulfidation mechanism was investigated. Solid sulfur powder was used as the sulfur source, and the reaction process did not exhaust toxic gases. The relevant process parameters, including the reaction pressure, radio frequency (RF) power, and sulfurization time, were also optimized. Under conditions of an RF power of 180 W (approximately 190 °C), a curing time of 60 min, and a working pressure of 30 Pa, we prepared a smooth, pinhole-free, (211) preferentially oriented Sb2S3 thin film. The film obtained good photocurrent response and a suitable band gap of 1.74 eV. The properties and structures of the Sb2S3 thin film were characterized by optical emission spectroscopy, high-resolution scanning electron microscopy, energy-dispersive spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and UV and Raman spectroscopies.
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