Fabrication of quasi-phase-matching stacks of GaAs plates using a new technique: room-temperature bonding

Abstract

Using the room-temperature-bonding technique, we have succeeded in fabricating a quasi-phase matching stack of thirty 106 µm-thick and 5.5 × 5.0 mm-aperture GaAs plates for high-power second-harmonic generation of CO2 lasers with the wavelength of 10.6 µm. Although its transmittance was lower than that of a single GaAs plate because of inclusion of small particles in the bonded interface, newly fabricated twenty stacked GaAs plates with the improved process show nearly the same transmittance with that of a single plate.