Abstract
Epitaxial thin films composed of 0.8FeTiO 3·0.2Fe 2O 3 in molar ratio solid solution have been prepared on α-Al 2O 3 (0 0 0 1) substrates by a pulsed laser deposition (PLD) method, and their electrical and magnetic properties have been examined. A single phase of the ordered phase ( R 3 ¯ symmetry) can be obtained under limited deposition condition: oxygen partial pressure ( P O 2 ) of 1.0×10 −3 Pa and substrate temperature ( T S) of 700 °C. The thin film with the ordered phase is a p-type semiconductor and ferrimagnetic with the Curie temperature ( T C) around 270 K.
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