Abstract
In this work, we have fabricated the Pd decorated silicon carbide (SiC) nanocauliflowers (NCs) thin films on electrochemically etched porous silicon (PS) substrate by DC magnetron co-sputtering technique. The gas sensing performance of Pd/SiC NCs to hydrogen gas under low (5–500 ppm) detection limit at high operating temperature regime (40–500 °C) were studied in detail without additional processing. The nanocauliflowers sensor demonstrates the high sensing response (Ra/Rg ̴ 14.48), fast response/recovery time (10s/18s) with excellent stability (24 cycles) towards 100 ppm H2 at high temperature of 380 °C. The underlying sensing mechanism behind the notable performance of the proposed sensing action towards H2 was also discussed in detail. Therefore, the investigated Pd/SiC NCs can be used as highly sensitive and selective hydrogen gas sensor at high working temperatures in harsh environment.
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