Abstract
Polycrystalline silicon (poly‐Si) films were fabricated by aluminum (Al)‐induced crystallization of Si‐rich oxide (SiOx) films. The fabrication was achieved by thermal annealing of SiOx /Al bilayers below the eutectic temperature of the Al–Si alloy. The poly‐Si film resulting from SiO1.45 exhibited good crystallinity with highly preferential (111) orientation, as deduced from Raman scattering, X‐ray diffraction, and transmission electron microscopy measurements. The poly‐Si film is probably formed by the Al‐induced layer exchange mechanism, which is mediated by Al oxide.
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More From: physica status solidi (RRL) – Rapid Research Letters
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