Abstract
This paper presents the fabrication, together with morphological and electrical characterizations of complementary resistive switches using the nanodamascene process. The as-fabricated devices are fully embedded in an insulating oxide, opening the way for further process steps such as three-dimensional monolithic integration. Complementary resistive switches electrical performance is consistent with resistive random access memories fabricated and characterized with the same procedure that showed ${R_{{\rm{OFF}}}}/{R_{{\rm{ON}}}}$ ratios of 100. Complementary operating voltages of ${V_{{\rm{th}}{\text{1,3}}}} = | \text{0.8} |\;{\text{V}}$ and ${V_{{\rm{th}}{\text{2.4}}}} = | \text{1.1} |\;{\text{V}}$ are obtained for 88 × 22 nm2 junction with a 6 nm thick HfO $_x$ junction.
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