Abstract
AbstractReceiver optoelectronic integrated circuits (OEICs) have been successfully designed on a three‐inch diameter InP substrate. Epitaxial layers grown by OMVPE on three‐inch diameter InP substrates showed good uniformity of electrical and optical properties. By using the epitaxial layers, transimpedance‐type receiver OEICs were fabricated. the receiver OEICs over a three‐inch diameter InP substrate showed an average bandwidth of 2.78 GHz with a standard deviation of 280 MHz. the receiver also exhibited a transimpedance of 61.1 dB and a sensitivity of ‐24.9 dBm for 2.4 Gb/s input signals. These results indicate that the receiver OEICs designed on a three‐inch diameter InP substrate are ready for practical use in Gb/s lightwave systems.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Electronics and Communications in Japan (Part II: Electronics)
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
