Abstract
Films containing ZnO quantum dots (ZnO QDs) with ca.5 nm in size were grown at 125°C by chemical vapor deposition. An emission is seen at a wavelength of 367 nm in photoluminescence spectra of the ZnO QDs, and its intensity is enhanced after the deposition of a Ga2ZnO4 film on the ZnO QDs. Using the films of ZnO QDs, we fabricated PIN devices constructed from In1.8Zn0.2O3 / InGaZnO4 / ZnO QDs / Ga2ZnO4 / Ni0.7Zn0.3O / Ni. The PIN devices exhibit good rectification characteristics.
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