Abstract
The fabrication of the thin piezoelectric layers on the silicon substrate by means of the pulse dc and the dc magnetron sputtering methods is discussed. The influences of the different kind of the surface, the conditions of deposition as well as the process of the thermal stabilising on the properties of the piezoelectric layer were investigated. The results of the investigations of the diffraction spectrum for the thin ZnO films are presented and discussed. The selection of the technological process parameters for the production of the thin ZnO layers in the sensor membranes with the ultrasonic wave generated was analysed.
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