Abstract

The use of a negative resist, hydrogen silsesquioxane (HSQ), combined with electron-beam lithography, was found to greatly simplify the fabrication of photonic crystal structures having submicron-sized features. Two methods of fabrication were compared for the creation of photonic crystals; in this example, the structures were composed of a square lattice of dielectric rods. One method utilized positive resist PMMA, whereas another method used a negative resist HSQ. The process sequence using PMMA required a lift-off step and a hard mask in order to convert the hole-patterned PMMA into high-aspect-ratio dielectric rods through reactive ion etching. Alternatively, the electron-beam exposure and development of HSQ resist resulted in the formation of SiO2-like posts which then served as a hard mask for subsequent etches. The use of HSQ eliminated the need for the SiO2 deposition and nickel lift-off, thereby reducing the required number of steps in the process sequence and greatly simplified the fabrication.

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