Fabrication of patterned Ba 0.71Sr 0.29TiO 3 thick film on Si substrate by tape casting method

Abstract

Patterned barium strontium titanate (BST) thick films are fabricated in the grooved silicon substrate using tape casting method and sintered from 800 to 1250 °C for 2 h. The slurry used for the tape casting is from sol-precipitation method, and the crystallization of the as precipitated BST powders is improved by hydrothermal treatment at 200 °C for 5 h. The patterned BST thick films have a size of 800 × 300 μm and homogeneous thickness of 30 μm. After sintering below 1000 °C, the obtained BST thick films have a dielectric abnormality at about 30 °C and the dielectric loss is about 0.02.