Abstract
p-Type ZnO thin turns were prepared on phosphorus (P)-doped poly-Si by sputter deposition under various ambient ratios of Ar and O 2 and subsequent annealing process at temperatures ranging from 400 to 600°C. The effects of the ambient sputtering gas and annealing temperature on the electrical and material characteristics of ZnO films were investigated. The formation of p-ZnO film on P-doped poly-Si was confirmed through comparisons involving the conduction type of the ZnO film deposited on insulating SiO 2 . The film deposited in Ar ambient and annealed at 500°C showed a maximum hole concentration of 5.92 X 10 19 cm -3 .
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