Fabrication of p-type cubic γ-CuI by solid iodination process for energy conversion and storage applications

Abstract

Abstract A simple solid iodination method is used to achieve an efficient p-type cubic γ-CuI thin film from Cu 3 N thin film. The crystallinity and crystal structure of γ-CuI thin films were confirmed by X-ray diffraction (XRD) technique. The maximum specific capacitance of CuI films was found to be 54 mF cm −2 at scan rate of 10 mV s −1 with excellent cycling stability. The optoelectronic behaviour was studied using UV–Vis–NIR spectroscopy and Hall measurements. These findings suggest that CuI film as a new inexpensive p-type material for third generation solar cells and good electrode for electrochemical energy storage devices.