Abstract
We have fabricated p-pentacene/n-Si organic photodiodes by thermal evaporation of pentacene films at 25 (RT), 60, and 80 °C. Our pentacene films exhibit the main absorption peak (highest occupied molecular orbital-lowest unoccupied molecular orbital gap transition) at 1.82 eV and photoelectric effects were clearly observed from our p-pentacene/n-Si diodes when illuminated by a monochromatic red light of 1.85 eV (670 nm). Excellent photoresponsivity of 2.6 A/W and the photoresponse time of less than 40 ns have been demonstrated. The photodiodes exhibited typical rectifying behavior in the dark and the leakage current increases with the deposition temperature.
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