Fabrication of p- and n-Type Field-Effect Transistors Using Poly( p-phenylenevinylene) via Water-Soluble Precursor under High-Gravity Condition

Abstract

Poly( p-phenylenevinylene) (PPV) thin films were prepared from a water-soluble precursor polymer by drop casting under a high-gravity condition on a doped silicon substrate with octadecyltrichlorosilane-treated SiO2 insulating layer. Dewetting of a polymer solution from a hydrophobic substrate was effectively prevented by preparing PPV thin films under a high-gravity condition, and high-quality PPV thin films were obtained. By choosing the appropriate source–drain metal electrodes, Au source–drain electrodes with inserted V2O5 buffer layer and Ca source–drain electrodes, p- and n-type PPV field-effect transistors with top contact geometries were fabricated. The field-effect hole and electron mobility estimated from the saturation region were 3.2×10-4 and 1.0×10-6 cm2 V-1 s-1, respectively.