Abstract
One-dimensional arrays of magic In clusters were grown using the Si(557) surface as a template. We find that magic clusters with an In6Si3 stoichiometry grow on the (111) terraces of the Si(557) surface, which are identical to those formed on the planar Si(111)7 × 7 surface. A preferential formation of the clusters on faulted half unit cells of the 7 × 7 reconstruction enables the growth of two different types of one-dimensional arrays with different cluster-cluster distances. A delayed onset of the cluster growth with an initial formation of atomic wires is found, in contrast to magic In clusters on the planar Si(111) surface.
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