Abstract
AbstractGroup‐III nitride on Si tandem solar cell structures, which are free from materials with high impacts on the environment such as group‐III arsenides or phosphides, were successfully fabricated using the surfaceactivated bonding of nitride‐based sub cells, which had been grown on (0001) GaN substrates, and (111) Si‐based sub cells. The backsides of the GaN substrates had been polished and their averaged roughness was smaller than 1 nm prior to bonding.The open‐circuit voltage (VOC) of the tandem cells was almost equal to the sum of VOC of the respective sub cells, while the conversion efficiency was limited by the properties of the nitride‐based top cells. Nitride‐on‐(100) Si tandem cells were also fabricated and the enhancement in VOC was observed. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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